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Infineon and Navitas Expand GaN Production, Accelerating Aerospace Electronics Innovation
Published: 7.14.2025
Infineon Technologies and Navitas Semiconductor have both announced manufacturing in Gallium Nitride (GaN) technology—bringing more scalable, cost-efficient, and lightweight power solutions to the aerospace and defense markets.
Two Big Moves in One Week
Navitas has partnered with Powerchip Semiconductor to ramp up 200 mm GaN-on-Silicon production, targeting high-reliability sectors including satellites, avionics, and electric propulsion systems.
Infineon, meanwhile, has hit a breakthrough with 300 mm GaN wafer manufacturing, enabling more chips per wafer and a significant reduction in cost-per-device.
These moves come at a critical time, as demand for smaller, lighter, and more efficient power solutions continues to grow across aviation, space, and defense platforms.
What’s at Stake?
Gallium Nitride is a wide-bandgap semiconductor that outperforms traditional silicon when it comes to energy efficiency and heat tolerance. In aerospace, that means:
Lighter systems (perfect for space-constrained satellites and UAVs)
Higher power density, enabling better avionics and radar performance
Lower energy loss, essential for electric aircraft and long-duration space missions
By scaling GaN on 200 mm and 300 mm wafers, these manufacturers are increasing global supply, easing costs, and making GaN a more practical choice for aerospace engineers and OEMs.
The GaN supply chain has often been a bottleneck for high-performance aerospace programs. With Infineon and Navitas scaling up, we’re likely to see broader adoption of GaN-based solutions across commercial and military systems and is becoming foundational in the next era of aerospace electronics.
