Imec Expands GaN Power Program to 300mm

Imec, the leading research hub for advanced semiconductor technologies, has expanded its industrial affiliation program on gallium nitride (GaN) power electronics to include 300mm GaN epitaxy and both low- and high-voltage GaN HEMT process flows

The program brings together leading equipment and technology partners, including AIXTRON, GlobalFoundries, KLA, Synopsys, and Veeco, to develop the full 300mm GaN platform at imec’s Leuven facility.

Why 300mm GaN Matters

GaN has already proven its efficiency advantages in fast chargers and compact power supplies. However, most current production relies on 150mm or 200mm wafers, limiting the economies of scale compared to silicon. Moving to 300mm means more devices per wafer, improved throughput, and the potential to integrate GaN processing within existing CMOS fabs, aligning it with mainstream semiconductor production.

The program targets two main technology tracks:

1. Low-voltage p-GaN HEMTs (~100V) for consumer and industrial power management.
2. High-voltage GaN HEMTs (≥650V) for automotive, renewable, and grid-level applications.

Imec also plans to test engineered substrates such as QST® to reduce wafer bow and enhance mechanical stability.

Ecosystem Impact

The partnership signals growing coordination across the GaN supply chain. Equipment suppliers like AIXTRON and Veeco are optimizing their MOCVD tools for 300mm wafers, KLA provides metrology expertise to ensure defect control, Synopsys supports EDA and design simulation, while GlobalFoundries brings foundry-scale process integration knowledge.

For the broader industry, this collaboration could bridge the gap between research prototypes and high-volume, cost-effective GaN device production. Analysts expect early demonstrations of 300mm GaN-on-Si wafers in 2025, followed by pilot production and commercial availability within the next few years.

“The benefits of transitioning to 300 mm wafers go beyond upscaling production and reducing manufacturing costs. Our CMOS-compatible GaN technology now has access to 300 mm state-of-the-art equipment that will allow us to develop more advanced GaN-based power devices.” said Stefaan Decoutere, program director, GaN power electronics at imec

As GaN technology matures on larger wafers, distributors, OEMs, and design engineers should monitor developments closely. Early alignment with emerging 300mm GaN suppliers can help manufacturers secure better pricing, ensure long-term component availability, and gain a competitive edge in next-generation power systems.