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VISHAY SIHB11N80E-GE3

SIHB11N80E-GE3 by SILICONIX (VISHAY) is an N-channel MOSFET with 800V drain-source voltage, 11A continuous drain current, and low on-resistance, ideal for high-efficiency power switching applications.

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Lead Time (weeks)

Expected Ship Date

10/15/26

Unit Price

$3.688575

Total Price

$3.688575

Multiples: 1,000

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1 - 1,999

$3.688575

2,000 - 2,999

$3.660525

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$3.632475

VISHAY SIHB11N80E-GE3

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