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UNITEDSIC UF4SC120023K4S

SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS

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related specs
RoHS
Compliant
Number of Channels
1
Power Dissipation
385 W
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
53 A
Drain to Source Voltage (Vdss)
1200 V

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