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TOSHIBA 2SK2313(F)

POWER FIELD-EFFECT TRANSISTOR 60A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

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Technical

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related specs
RoHS
Compliant
Lead Free
Lead Free
Mount
Through Hole
Packaging
Bulk
Element Configuration
Single
Number of Pins
3
Number of Elements
1
Continuous Drain Current (ID)
60 A
Gate to Source Voltage (Vgs)
20 V
Power Dissipation
150 W

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