SILICONIX SISH103DN-T1-GE3

SISH103DN-T1-GE3 BY SILICONIX (VISHAY) IS A P-CHANNEL MOSFET WITH A DRAIN-SOURCE VOLTAGE OF 30V CONTINUOUS DRAIN CURRENT OF 4.2A RDS(ON) OF 0.055 AT VGS=10V AND A COMPACT SURFACE-MOUNT PACKAGE SUITABLE FOR HIGH-SPEED SWITCHING APPLICATIONS.