SGT65R65AL BY ST MICROELECTRONICS IS A HIGH-VOLTAGE POWER MOSFET WITH A DRAIN-SOURCE VOLTAGE OF 650V CONTINUOUS DRAIN CURRENT OF 4.2A LOW RDS(ON) AND OPTIMIZED FOR SWITCHING APPLICATIONS.
IBS Electronics uses cookies and similar technologies to gather data pertaining to your interactions and communications with our websites and services, encompassing session replay and chat session recordings. By continuing to use our websites, you signify your agreement with the terms stated in our Privacy Policy, express your consent for the use of cookies, tags, pixels, beacons, and other technologies, and confirm your acceptance of our website's Terms of Use.
.png){kind=logo}
