K4B1G1646E-HCF8,SAMSUNG,DDR3 DRAM 64MX16 0.15NS CMOS PBGA96
K4B1G1646E-HCF8 BY SAMSUNG IS A DDR3 DRAM MEMORY IC WITH 64M X 16 ORGANIZATION 0.15NS SPEED CMOS TECHNOLOGY AND PBGA96 PACKAGE IDEAL FOR HIGH-SPEED DATA STORAGE AND PROCESSING APPLICATIONS.
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