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ONSEMI NVMFWD010N10MCLT1G
NVMFWD010N10MCLT1G,ONSEMI,POWER FIELD-EFFECT TRANSISTOR 61A I(D) 100V 0.0104OHM 2-ELEMENT N-CHANNEL SILICON METAL-OXIDE SEMICONDUCTOR FET
NVMFWD010N10MCLT1G BY ONSEMI IS A DUAL N-CHANNEL MOSFET FEATURING 61A DRAIN CURRENT 100V DRAIN-SOURCE VOLTAGE 0.0104 OHM RDS(ON) SILICON METAL-OXIDE CONSTRUCTION AND 2-ELEMENT CONFIGURATION FOR POWER SWITCHING APPLICATIONS.