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Home Products Discrete Semiconductors Transistors MJD5731T4G

ONSEMI MJD5731T4G

MJD5731T4G by ONSEMI is a PNP surface mount silicon power transistor in a TO-252-3 package, featuring 1.0 A current, 350 V voltage, and high voltage capability, ideal for power applications.
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related specs
RoHS
Compliant
Lead Free
Lead Free
Case/Package
DPAK
Contact Plating
Tin
Packaging
Tape and Reel
Lifecycle Status
Production (Last Updated: 3 years ago)
Polarity
PNP
Element Configuration
Single
Number of Pins
3
Number of Elements
1
hFE Min
30
Power Dissipation
1.56 W
Transition Frequency
10000000 Hz
Max Collector Current
1 A
Collector Emitter Breakdown Voltage
350 V
Collector Emitter Saturation Voltage
1 V
Datasheet
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Availability
5,000
Ships in 16 Days
5,000
Lead Time (weeks)
18
Unit Price
$0.350625
Total Price
$876.5625
Minimum: 2,500
Multiples: 2,500
Quantity must be in multiples of 2,500
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$0.350625
5,000 - 7,499
$0.350625
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$0.343613

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