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ONSEMI KSC5030FRTU

BIPOLAR TRANSISTORS - BJT NPN SILICON TRANSISTOR

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Technical

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related specs
RoHS
Compliant
Mount
Through Hole
Case/Package
SC
Polarity
NPN
Element Configuration
Single
hFE Min
10
Number of Elements
1
Power Dissipation
60 W
Max Collector Current
6 A
Collector Emitter Breakdown Voltage
800 V

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