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NXP SEMICONDUCTORS PSMN011-80YS

POWER FIELD-EFFECT TRANSISTOR 67A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

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related specs
RoHS
Compliant
Case/Package
SOT-669
Number of Pins
4
Power Dissipation
117 W
Continuous Drain Current (ID)
67 A
Drain to Source Voltage (Vdss)
80 V

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