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NXP SEMICONDUCTORS PMT760EN115

POWER FIELD-EFFECT TRANSISTOR 0.9A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

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related specs

RoHS

Compliant

Lifecycle Status

Obsolete (Last Updated: 3 months ago)

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Case/Package

TO-261-4

Rds On Max

0.95 Ω

Input Capacitance

0.16 F

Continuous Drain Current (ID)

0.9 A

Drain to Source Voltage (Vdss)

20 V

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