Home Products Discrete Semiconductors Transistors MOSFETs MRFE6VP8600HSR5

NXP SEMICONDUCTORS MRFE6VP8600HSR5

RF POWER TRANSISTOR 470 TO 860 MHZ 600 W TYP GAIN IN DB IS 19.3 @ 860 MHZ 50 V LDMOS SOT1829

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related specs

RoHS

Compliant

Lead Free

Mount

Surface Mount

Element Configuration

Dual

Number of Pins

Number of Elements

Power Dissipation

1052 W

Gate to Source Voltage (Vgs)

10 V

Drain to Source Voltage (Vdss)

140 V

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