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NXP SEMICONDUCTORS MRF1517NT1

RF POWER TRANSISTOR 0.136 TO 0.52 GHZ 8 W TYP GAIN IN DB IS 14 @ 520 MHZ 7.5 V LDMOS

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related specs
RoHS
Compliant
Lead Free
Lead Free
Mount
Surface Mount
Contact Plating
Tin
Number of Pins
3
Number of Elements
1
Power Dissipation
0.0625 W
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
4 A

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