Home Products Discrete Semiconductors Transistors MOSFETs PSMN2R6-40YS115

NEXPERIA PSMN2R6-40YS115

POWER FIELD-EFFECT TRANSISTOR 100A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

Product Details

Select to search
related specs

Lifecycle Status

Production (Last Updated: 2 months ago)

Packaging

Tape & Reel

Power Dissipation

131 W

Gate to Source Voltage (Vgs)

20 V

Continuous Drain Current (ID)

100 A

Drain to Source Voltage (Vdss)

40 V

Availability

3,000

Ships in 16 Days

3,000

Unit Price

$4.4319

Total Price

$6,647.85

Minimum: 1,500

Multiples: 1,500