2SC2312 by MITSUBISHI is a high-frequency NPN transistor designed for RF amplification applications, featuring a maximum collector current of 1A, a collector-emitter voltage of 25V, and a power dissipation of 1W, ideal for VHF band use.
IBS Electronics uses cookies and similar technologies to gather data pertaining to your interactions and communications with our websites and services, encompassing session replay and chat session recordings. By continuing to use our websites, you signify your agreement with the terms stated in our Privacy Policy, express your consent for the use of cookies, tags, pixels, beacons, and other technologies, and confirm your acceptance of our website's Terms of Use.
.png){kind=logo}
