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GENERAL SEMICONDUCTOR BZT52B2V7-E3-08

BZT52B2V7-E3-08,GENERAL SEMICONDUCTOR

BZT52B2V7-E3-08 BY GENERAL SEMICONDUCTOR (VISHAY) IS A 2.7V ZENER DIODE WITH A MAXIMUM POWER DISSIPATION OF 500MW A TEST CURRENT OF 5MA AND A TEMPERATURE RANGE OF -65C TO +150C DESIGNED FOR VOLTAGE REGULATION AND PROTECTION APPLICATIONS.

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GENERAL SEMICONDUCTOR BZT52B2V7-E3-08

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