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GENERAL SEMICONDUCTOR BZT52B12-HE3_A-08

BZT52B12-HE3_A-08,GENERAL SEMICONDUCTOR

BZT52B12-HE3_A-08 BY GENERAL SEMICONDUCTOR (VISHAY) IS A 12V ZENER DIODE WITH A POWER DISSIPATION OF 500MW A TEST CURRENT OF 5MA AND A MAXIMUM ZENER IMPEDANCE OF 20 SUITABLE FOR VOLTAGE REGULATION AND PROTECTION APPLICATIONS.

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GENERAL SEMICONDUCTOR BZT52B12-HE3_A-08

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